Russian Microelectronics : Impact Factor & More
eISSN: 1608-3415pISSN: 1063-7397
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Key Metrics
CiteScore 
1
H-Index
19
SJR
Q3Materials Chemistry
SNIP
0.47
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Topics Covered on Russian Microelectronics
Russian Microelectronics Journal Specifications
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| Publisher | Pleiades Publishing |
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Recently Published Papers in Russian Microelectronics
Ru-Based Interconnects for Memristor Crossbars
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FinFET-Based SRAM Cell Using Low-Power Technique for Leakage and Stability Optimization
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Electrochemical Capacitance of Porous Silicon, Carbon, and Manganese(IV) Oxide-Based Composites
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Control of the Nucleation and Growth Kinetics of Colloidal HgTe Quantum Dots by Varying the Method of Te and Hg Precursor Addition for IR Photosensors
- 1 Apr 2026
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Design and Optimization of CMOS Two-Stage Operational Amplifier Using Hippopotamus Optimization Algorithm
- 1 Apr 2026
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Predicting the Detection Capabilities for Weak Optical Signals in the 3–5 μm Spectral Range for Next-Generation HgTe Quantum Dot-Based Photodetectors
- 1 Apr 2026
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Ru-Based Interconnects for Memristor Crossbars
- 1 Apr 2026
- Russian Microelectronics
FinFET-Based SRAM Cell Using Low-Power Technique for Leakage and Stability Optimization
- 1 Apr 2026
- Russian Microelectronics
Electrochemical Capacitance of Porous Silicon, Carbon, and Manganese(IV) Oxide-Based Composites
- 1 Apr 2026
- Russian Microelectronics
Control of the Nucleation and Growth Kinetics of Colloidal HgTe Quantum Dots by Varying the Method of Te and Hg Precursor Addition for IR Photosensors
- 1 Apr 2026
- Russian Microelectronics
Design and Optimization of CMOS Two-Stage Operational Amplifier Using Hippopotamus Optimization Algorithm
- 1 Apr 2026
- Russian Microelectronics
Predicting the Detection Capabilities for Weak Optical Signals in the 3–5 μm Spectral Range for Next-Generation HgTe Quantum Dot-Based Photodetectors
- 1 Apr 2026
- Russian Microelectronics
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